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| (R) MDV04-600 HIGH VOLTAGE ULTRA-FAST DIODE FOR VIDEO MAJOR PRODUCT CHARACTERISTICS IFpeak VRRM trr VF (max) 4A 600 V 55 ns 1.2 V FEATURES AND BENEFITS TURBOSWITCH TM OUTSTANDING BENEFITS. HIGH REVERSE VOLTAGE : 600 V LOW POWER LOSSES INDUCING LOW TEMPERATURE AND HIGH RELIABILITY. OPTIMIZED TRADE-OFF BETWEEN trr AND SOFTNESS FOR VIDEO HORIZONTAL DEFLECTION. DESCRIPTION High voltage ultra-fast diode especially designed for modulation and flyback rectification in standard and high resolution displays for TV's and monitors. The device is packaged in a DO-201AD axial enveloppe. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF peak IFRM IFSM Tstg Tj Parameter Repetitive peak reverse voltage Forward peak current (1) Repetitive peak forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature =0.5 Ta=115C triangular tp=5s F=1kHz square tp = 10 ms sinusoidal VALUE 600 4 100 80 - 40 to 150 150 Unit V A A A C C DO-201AD (plastic) (1) on infinite heatsink with 10mm lead length August 1999 - Ed: 4A 1/4 MDV04-600 THERMAL RESISTANCES Symbol Rth(j-l) Rth(j-a) Junction to lead Junction to ambient on printed circuit L lead = 10mm Parameter Max. 20 75 Unit C/W C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Forward voltage drop * tp = 5 ms, < 2% ** tp = 380 s, < 2% Test Conditions VR = 480V IF = 4 A Tj = 25C Tj = 125C Tj = 25C Tj = 125C Typ. Max. 50 0.75 1.28 1.20 Unit A mA V V VF ** Pulse test : DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Reverse recovery time Test Conditions IF = 0.5A IR = 1A Irr = 0.25A IF = 100 mA IR = 100 mA Irr = 10mA DYNAMIC ELECTRICAL CHARACTERISTICS TURN-ON SWITCHING Symbol tfr VFP Parameter Forward recovery time Peak forward voltage Test Conditions IF = 4 A dIF/dt = 100 A/s Measured at1.1 x VF max. Tj = 25C Typ. Max. 0.5 15 Unit s V Typ. 55 130 Max. 75 Unit ns ns To evaluate the maximum conduction losses use the following equation : P= 1.0 x Ip 0.050 x Ip 2 x+ x 2 3 : duty cycle Ip : Peak current Ex : for Ip = 4 A and = 0.5, P = 1.2 Watts. 2/4 MDV04-600 Fig. 1: Power dissipation versus peak forward current (triangular waveform, =0.5). Fig. 2: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m), recommended pad layout). PF(av)(W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.5 1.0 1.5 1E-2 Single pulse K=[Zth(j-a)/Rth(j-a)] 1E+0 = 0.5 = 0.2 1E-1 = 0.1 T Ip(A) 2.0 2.5 3.0 3.5 4.0 4.5 t(s) 1E-3 1E-3 1E-2 1E-1 1E+0 1E+1 =tp/T tp 1E+2 1E+3 Fig. 3: Forward voltage drop versus forward current (maximum values). Fig. 4: Reverse recovery time versus dIF/dt. IFM(A) 1E+2 1E+1 1E+0 1E-1 VFM(V) 1E-2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 400 350 300 250 Tj=125C Tj=25C trr(ns) IF=Ip 90% confidence Tj=125C 200 150 100 50 0 0 20 40 60 dIF/dt(A/s) 80 100 120 140 160 180 200 Fig. 5: Transient peak forward voltage versus dIF/dt. Fig. 6: Forward recovery time versus dIF/dt. VFP(V) 20 15 10 5 dIF/dt(A/s) IF=Ip 90% confidence Tj=125C tfr(ns) 350 300 250 200 150 100 50 0 0 20 40 60 dIF/dt(A/s) IF=Ip 90% confidence Tj=125C Vfr=1.5V 0 0 20 40 60 80 100 120 140 160 180 200 80 100 120 140 160 180 200 3/4 MDV04-600 PACKAGE MECHANICAL DATA DO-201AD B A B OC note 1 E E note 1 OD OD note 2 DIMENSIONS REF. A B C D E 25.40 5.30 1.30 1.25 Millimeters Min. Max. 9.50 Inches Min. 1.000 0.209 0.051 0.049 NOTES 1 - The lead diameter D is not controlled over zone E 2 - The minimum axial length within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Max. 0.374 Ordering type MDV04-600 MDV04-600RL Marking MDV04-600 MDV04-600 Package DO-201AD DO-201AD Weight 1.166g. 1.166g. Base qty 600 1900 Delivery mode Ammopack Tape & reel Epoxy meets UL94,V0 Polarity : Cathode indicated by polarity band Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4 |
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